? 2003 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 3 ma 500 v v gs(th) v ds = v gs , i d = 8 ma 2.5 4.5 v i gss v gs = 20 v dc , v ds = 0 200 na i dss v ds = v dss t j = 25 c 100 a v gs = 0 v t j = 125 c2ma r ds(on) v gs = 10 v, i d = i t 55 m ? note 2 symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 500 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c, chip capability 72 a i dm t c = 25 c, note 1 320 a i ar t c = 25 c80a e ar t c = 25 c64mj e as t c = 25 c6j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 580 w t j -40 ... +150 c t jm 150 c t stg -40 ... +150 c v isol 50/60 hz, rms t = 1 min 2500 v~ i isol 1 ma t = 1 s 3000 v~ m d mounting torque 1.5/13 nm/lb.in. terminal connection torque 1.5/13 nm/lb.in. weight 19 g hiperfet tm power mosfets single die mosfet n-channel enhancement mode avalanche rated, high dv/dt, low t rr d s g s ixfe 80n50 v dss = 500 v i d25 = 72 a r ds(on) = 55 m ? ? ? ? ? features ? conforms to sot-227b outline ? low r ds (on) hdmos tm process ? rugged polysilicon gate cell structure ? unclamped inductive switching (uis) rated ? low package inductance ? fast intrinsic rectifier applications ? dc-dc converters ? battery chargers ? switched-mode and resonant-mode power supplies ? dc choppers ? temperature and lighting controls advantages ? low cost ? easy to mount ? space savings ? high power density g = gate d = drain s = source either source terminal at minibloc can be used as main or kelvin source ds98898b(01/03) preliminary data sheet isoplus 227 tm (ixfe) s g s d
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixfe 80n50 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 15 v; i d = i t , note 2 50 70 s c iss 9890 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1750 pf c rss 460 pf t d(on) 61 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = i t 70 ns t d(off) r g = 1 ? (external), 102 n s t f 27 ns q g(on) 380 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = i t 80 nc q gd 173 nc r thjc 0.22 k/w r thck 0.07 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 80 a i sm repetitive; 320 a pulse width limited by t jm v sd i f = i s , v gs = 0 v, 1.3 v pulse test, t 300 s, duty cycle d 2 % t rr i f = 25a, -di/dt = 100 a/ s, v r = 100 v 250 n s q rm 1.2 c i rm 8a isoplus-227 b notes: 1. pulse width limited by t jm. 2. pulse test, t 300 ms, duty cycle d 2% . 3. i t test current: i t = 40 a
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